STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A
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ModelSTP110N7F6
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BrandST
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Dc21+
* Prices may fluctuate, please ask factory personnel for details.
Introduction: 100% Brand new and original manufacturer in stock
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| Model | STP110N7F6 |
| Pack | TO-20 |
| Brand | ST |
| Dc | 21+ |
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages
VDS Drain-source voltage 68 V
VGS Gate- source voltage ±20 V
ID
Drain current (continuous) at TC = 25 °C 110 A
Drain current (continuous) at TC = 100 °C 80 A
IDM(1)
1. Pulse width is limited by safe operating area
Drain current (pulsed) TC = 25 °C 440 A
PTOT Total dissipation at TC = 25 °C 176 W
EAS(2)
2. Starting TJ = 25 °C, ID = 35 A, VDD = 50 V
Single pulse avalanche energy 185 mJ
TJ Operating junction temperature range
-55 to 175
°C
Tstg Storage temperature range °C
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