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3LP01S-TL-E
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- / 22+
- 1962
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3LP01S-TL-E
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- N/A / 22+
- 9587
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3LP01S-TL-E
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- Diodes, Transistors and Thyristors / 23+
- 5000
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3LP01S-TL-E
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- NA / 22+
- 2500
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3LP01S-TL-E
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- SOT523 / 08+
- 626197
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3LP01S-TL-E
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Hangzhou Weiku Information Technology Co., LTDChina+86 13588313025+86 0571-85317607
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3LP01S-TL-E
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Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 0571-85317500
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3LP01S-TL-E
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Hangzhou Weston Network Technology Co., LtdChina+86 13552259951+86 0571-85317607
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Hangzhou Weston Network Technology Co., LtdChina+86 13645678901+86 0571-85317500
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3LP01S-TL-E
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Hangzhou Weston Network Technology Co., LtdChina+86 12345678901+86 0571-85317500
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3LP01S-TL-E
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- / 22+
- 1962
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3LP01S-TL-E
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Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 0571-85317605
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3LP01S-TL-E
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Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 13418718544
Select The Same ModelsSend Inquiry(0)3lp01s-tl-e DataSheet Download Figures and information are for reference only, subject to actual PDF- Standard Packaging:Three Thousand
- Category:Separated Semiconductor Products
- Family:FET - Single
- Series:-
- FET Type:MOSFET P Channel, Metal Oxide
- FET Characteristics:Logic Level Gate
- Drain To Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25&Deg; C:100mA
- Open State Rds (Maximum) @ IdVgs @ 25&Deg; C:10.4 Ohms @ 50mA, 4V
- Vgs (Th) At Id (Maximum):-
- Gate Charge (Qg) @ Vgs:1.43nC @ 10V
- Input Capacity (Ciss) @ Vds:7.5pF @ 10V
- Power - Maximum:150mW
- Installation Type:Surface Mount
- Packaging/Housing:SC-75, SOT-416
- Supplier Equipment Packaging:SMCP
- Packing:Tape and Reel (TR)