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IRFP4227PBF
Spot Stock Inquiry - Infineon Technologies AG
- TO-247AC /
- 16000
- --
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IRFP4227PBF
Inquiry - TO-247
- Infineon / 20+/21+
- 12000
- --
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IRFP4227PBF
Inquiry - Infineon
- / 22+
- 7500
- --
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IRFP4227PBF
Inquiry - IR
- / 2022+
- 50000
- --
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IRFP4227PBF
Inquiry - Infineon Technologies AG
- TO-247AC /
- 16000
- --
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IRFP4227PBF
Inquiry - INFINEON
- TO-247 / 22+/23+
- 30000
- --
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IRFP4227PBF
Inquiry - IR
- TO-247 / 21+
- 3500
- --
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IRFP4227PBF
Inquiry - Infineon Technologies
- Diodes, Transistors and Thyristors / 23+
- 5000
- --
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IRFP4227PBF
Inquiry - INFINEON
- TO-247 / 22+
- 2500
- --
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IRFP4227PBF
Inquiry - INFINEON
- TO-247 / 21+
- 15000
- --
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HYC Electronics & Technology Co.,LtdGoldChina+86 13823693146
-
IRFP4227PBF
Inquiry - INFINEON
- TO247 / 22+
- 28000
- --
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Hangzhou Weiku Information Technology Co., LTDChina+86 13588313025+86 0571-85317607
-
IRFP4227PBF
Inquiry - INFINEON
- TO247 / 22+
- 28000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 0571-85317500
-
IRFP4227PBF
Inquiry - INFINEON
- TO247 / 22+
- 28000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13552259951+86 0571-85317607
-
IRFP4227PBF
Inquiry - INFINEON
- TO247 / 22+
- 28000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13645678901+86 0571-85317500
-
IRFP4227PBF
Inquiry - INFINEON
- TO247 / 22+
- 28000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 12345678901+86 0571-85317500
-
IRFP4227PBF
Inquiry - INFINEON
- TO247 / 22+
- 28000
- --
-
IRFP4227PBF
Inquiry - INFINEON
- TO247 / 22+
- 28000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 0571-85317605
-
IRFP4227PBF
Inquiry - INFINEON
- TO247 / 22+
- 28000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 13418718544
Select The Same ModelsSend Inquiry(0)irfp4227pbf DataSheet Download Figures and information are for reference only, subject to actual PDF- Standard Packaging:Twenty-Five
- Category:Separated Semiconductor Products
- Family:FET - Single
- Series:HEXFET&Reg;
- FET Type:MOSFET N-Channel, Metal Oxide
- FET Characteristics:Standard Type
- Drain To Source Voltage (Vdss):200V
- Current - Continuous Drain (Id) @ 25&Deg; C:65A
- Open State Rds (Maximum) @ IdVgs @ 25&Deg; C:25 Milliohms @ 46A, 10V
- Vgs (Th) At Id (Maximum):5V @ 250&Micro; A
- Gate Charge (Qg) @ Vgs:98nC @ 10V
- Input Capacity (Ciss) @ Vds:4600pF @ 25V
- Power - Maximum:330W
- Installation Type:Through-Hole
- Packaging/Housing:TO-247-3
- Supplier Equipment Packaging:TO-247AC
- Packing:Pipe Fittings