10-FZ062PA150SA01-P995F18
| Model | 10-FZ062PA150SA01-P995F18 |
| Description | Insulated Gate Bipolar Transistor |
| PDF file | Total 15 pages (File size: 381K) |
| Chip Manufacturer | VINCOTECH |
FZ06 / F0062PA150SA01
preliminary datasheet
flowPHASE0
Features
●
Trench Fieldstop IGBT technology
●
2-clip housing in 12mm and 17mm height
●
Compact and low inductance design
●
AlN substrate for improved performance
3
600V/150A
flow0 housing
Target Applications
●
Motor Drive
●
UPS
Schematic
Types
●
FZ062PA150SA01
●
F0062PA150SA01
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
142
183
450
264
400
±20
6
360
175
V
A
A
W
V
μs
V
°C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
120
150
450
174
264
175
V
A
A
W
°C
copyright Vincotech
1
Revision: 1
