12N60-A-TF1-T
| Model | 12N60-A-TF1-T |
| Description | Transistor |
| PDF file | Total 7 pages (File size: 334K) |
| Chip Manufacturer | UTC-IC |
UNISONIC TECHNOLOGIES CO., LTD
12N60
12 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC
12N60
are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
Power MOSFET
FEATURES
* R
DS(ON)
= 0.7Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Lead-free:
12N60L
Halogen-free: 12N60G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
12N60-x-TA3-T
12N60L-x-TA3-T
12N60-x-TF1-T
12N60L-x-TF1-T
12N60-x-TF3-T
12N60L-x-TF3-T
Note: Pin Assignment: G: Gate D: Drain
12N60L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Drain-Source Voltage
(4)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F
(3) A: 600V, B: 650V
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
Halogen Free
12N60G-x-TA3-T
12N60G-x-TF1-T
12N60G-x-TF3-T
S: Source
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
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www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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