1M130Z
| Model | 1M130Z |
| Description | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
| PDF file | Total 5 pages (File size: 351K) |
| Chip Manufacturer | TRSYS |
1N4741A THRU 1M200Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt
DO-41
FEATURES
l
l
l
l
l
l
l
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical I
R
less than 5.0 A above 11V
High temperature soldering :
260 /10 seconds at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: Molded plastic, DO-41
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak Pulse Power Dissipation on T
A
=50 (Note A)
Derate above 50
Peak forward Surge Current 8.3ms single half sine-wave
superimposed on rated load(JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
NOTES:
A. Mounted on 5.0mm
2
(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
SYMBOL
P
D
I
FSM
T
J
,T
STG
VALUE
1.0
6.67
10
-55 to +150
UNITS
Watts
mW/
Amps
