1MB05D-120
| Model | 1MB05D-120 |
| Description | Fuji Discrete Package IGBT |
| PDF file | Total 5 pages (File size: 273K) |
| Chip Manufacturer | FUJI |
Fuji Discrete Package IGBT
n
Features
•
Square RBSOA
•
Low Saturation Voltage
•
Less Total Power Dissipation
•
Minimized Internal Stray Inductance
n
Outline Drawing
n
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Symbols
Collector-Emitter Voltage
V
CES
Gate -Emitter Voltage
V
GES
DC T
c
= 25°C
I
C 25
Collector Current
DC T
c
=100°C
I
C 100
1ms T
c
= 25°C
I
C PULSE
IGBT Max. Power Dissipation
P
C
FWD Max. Power Dissipation
P
C
Operating Temperature
T
j
Storage Temperature
T
stg
Mounting Screw Torque
n
Equivalent Circuit
Ratings
1200
±
20
9
5
27
100
60
+150
-40
∼
+150
50
Units
V
V
A
W
W
°C
°C
Nm
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=5mA
V
GE
=15V I
C
=5A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=5A
V
GE
=±15V
R
G
=330Ω
V
CC
=600V
I
C
=5A
V
GE
=+15V
R
G
=33Ω
I
F
=5A V
GE
=0V
I
F
=5A
,
V
GE
=-10V, di/dt=100A/µs
Min.
Typ.
Max.
1.0
20
8.5
3.5
Units
mA
µA
V
pF
1.2
0.6
1.5
0.5
0.16
0.11
0.30
0.5
3.0
350
5.5
650
150
40
Turn-on Time
Switching Time
Turn-off Time
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
µs
µs
V
ns
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
Test Conditions
IGBT
Diode
Min.
Typ.
Max.
1.25
2.08
Units
°C/W
