1N4153UR-1
| Model | 1N4153UR-1 |
| Description | SWITCHING DIODE |
| PDF file | Total 2 pages (File size: 36K) |
| Chip Manufacturer | CDI-DIODE |
• 1N4153UR-1 AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/337
• SWITCHING DIODE
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
1N4153UR-1
CDLL4153
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 150 mA @ TA = +25°C
Derating: 1.0 mA dc/°C Above TA = +25°C
Forward Surge Current: 2A (pk), (tp = 1µs); 0.25A (pk), (tp = 1s)
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
Type
V BR
IR = 5
µA
V dc
4153UR-1
CDLL4153
75
75
V (pk)
50
50
V RWM
I R1
VR = 50 V dc
TA = 25°C
nA dc
50
50
1 R2
VR = 50 V dc
TA = 150°C
µA dc
50
50
C
VR = 0; f = 1 Mhz;
trr
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
pF
2.0
2.0
ns
4
4
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80; LL34)
FORWARD VOLTAGE LIMITS – ALL TYPES
V F1
Limits
I F = 100 µA dc
V F2
I F = 250 µA dc
V F3
I F = 1 mA dc
V F4
I F = 2 mA dc
V F5
I F = 10 mA dc
V F6
LEAD FINISH:
Tin / Lead
I F = 20 mA dc
V dc
minimum
maximum
0.49
0.55
V dc
0.53
0.59
V dc
0.59
0.67
V dc
0.62
0.70
V dc
0.70
0.81
V dc
0.74
0.88
THERMAL RESISTANCE (ROJEC):
100 °C/W maximum at L = 0
THERMAL IMPEDANCE: (ZO
JX): 70
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
