1N60L-B-AA3-B
| Model | 1N60L-B-AA3-B |
| Description | Small Signal Field-Effect Transistor, 1.2A I(D), 650V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4 |
| PDF file | Total 6 pages (File size: 286K) |
| Chip Manufacturer | UTC-IC |
UNISONIC TECHNOLOGIES CO., LTD
1N60
1.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC
1N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
=11.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
1N60-x-AA3-B
1N60L-x-AA3-B
1N60-x-T92-B
1N60L-x-T92-B
1N60-x-T92-K
1N60L-x-T92-K
1N60-x-TA3-T
1N60L-x-TA3-T
1N60-x-TF3-T
1N60L-x-TF3-T
1N60-x-TM3-T
1N60L-x-TM3-T
1N60-x-TN3-R
1N60L-x-TN3-R
1N60-x-TN3-T
1N60L-x-TN3-T
Note: Pin Assignment: G: Gate D: Drain
Halogen Free
1N60G-x-AA3-B
1N60G-x-T92-B
1N60G-x-T92-K
1N60G-x-TA3-T
1N60G-x-TF3-T
1N60G-x-TM3-T
1N60G-x-TN3-R
1N60G-x-TN3-T
S: Source
Package
SOT-223
TO-92
TO-92
TO-220
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Bulk
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