1SS303
| Model | 1SS303 |
| Description | SILICON SWITCHING DIODES |
| PDF file | Total 4 pages (File size: 59K) |
| Chip Manufacturer | NEC |
DATA SHEET
SILICON SWITCHING DIODE
1SS303
HIGH SPEED SWITCHING
SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE
FEATURES
•
•
•
•
Low capacitance: C
t
= 2.5 pF TYP.
High speed switching: t
rr
= 4.0 ns MAX.
Wide applications including switching, limitter, clipper.
Double diode configuration assures economical use.
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
0.65
0.65
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25°C)
Peak Reverse Voltage
DC Reverse Voltage
Surge Current (1
µ
s)
Surge Current (1
µ
s)
Peak Forward Current
Peak Forward Current
Average Rectified Current
Average Rectified Current
Maximum Temperatures
Junction Temperature
Storage Temperature Range
Thermal Resistance
Junction to Ambient
Junction to Ambient
Note
Both diodes loaded simultaneously.
Note
Note
Note
Note
V
R
I
FSM
I
FSM
I
FM
I
FM
I
O
I
O
50
6.0
4.0
450
300
150
100
V
0.3
A
0.9±0.1
Marking
mA
mA
mA
mA
CONNECTION DIAGRAM (Top View)
T
j
T
stg
150
–55 to + 150
°C
°C
2
3
1. Cathode
2. Cathode
3. Anode
Marking : A4
R
th(j-a)
R
th(j-a)
1.0
0.85
°C/mW
°C/mW
1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Forward Voltage
SYMBOL
V
F1
V
F2
V
F3
Reverse Current
Capacitance
Reverse Recovery Time
I
R
C
t
t
rr
TEST CONDITIONS
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
V
R
= 50 V
V
R
= 0 V, f = 1.0 MHz
See Test Circuit.
2.5
MIN.
TYP.
0.72
0.88
1.0
MAX.
1.0
1.1
1.2
0.1
4.0
4.0
UNIT
V
V
V
0 to 0.1
µ
A
pF
ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16308EJ2V0DS00 (2nd edition)
(Previous No. DC-2100)
Date Published July 2002 NS CP(K)
Printed in Japan
0.15
+0.1
−0.05
A
0.3
+0.1
−0
V
RM
75
V
2.0±0.2
0.3
+0.1
−0
2
3
1
©
1987
