1SS305
| Model | 1SS305 |
| Description | SILICON SWITCHING DIODES |
| PDF file | Total 4 pages (File size: 54K) |
| Chip Manufacturer | NEC |
DATA SHEET
SILICON SWITCHING DIODE
1SS305
HIGH SPEED SWITCHING
SILICON EPITAXIAL DIODE
FEATURES
•
Low capacitance: C
t
= 4.0 pF MAX.
•
High speed switching: t
rr
= 3.0 ns MAX.
•
Wide applications including switching, limitter, clipper.
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
ABSOLUTE MAXIMUM RATINGS
0.65
0.65
Peak Reverse Voltage
DC Reverse Voltage
Peak Forward Current
Average Rectified Current
DC Forward Current
Maximum Temperatures
Junction Temperature
Storage Temperature Range
Thermal Resistance
Junction to Ambient
V
RM
V
R
I
FM
I
O
I
F
100
100
300
100
100
V
V
mA
2.0±0.2
0.3
+0.1
−0
Maximum Voltages and Currents (T
A
= 25°C)
2
3
0.3
mA
0.9±0.1
Marking
mA
T
stg
–55 to + 150
°C
R
th(j-a)
0.85
°C/mW
CONNECTION DIAGRAM (Top View)
2
3
1
1. N.C.
2. Anode
3. Cathode
Marking : A14
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Forward Voltage
SYMBOL
V
F1
V
F2
V
F3
Reverse Current
Capacitance
Reverse Recovery Time
I
R
C
t
t
rr
TEST CONDITIONS
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
V
R
= 100 V
V
R
= 0 V, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6 V, R
L
= 100
Ω,
See Test Circuit.
2.0
MIN.
TYP.
720
850
950
MAX.
850
1000
1200
1.0
4.0
3.0
UNIT
mV
mV
mV
0 to 0.1
T
j
150
°C
µ
A
pF
ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
Date Published July 2002 NS CP(K)
Printed in Japan
0.15
+0.1
−0.05
0.3
+0.1
−0
1
©
1987
