1T365
| Model | 1T365 |
| Description | Silicon Variable Capacitance Diode |
| PDF file | Total 4 pages (File size: 50K) |
| Chip Manufacturer | SONY |
1T365
Silicon Variable Capacitance Diode
Description
The 1T365 is a variable capacitance diode
contained in super miniature package, and used for
electronic-tuning of BS tuner.
Features
•
Super miniature package
•
Small capacitance
•
Low leakage current
0.7 pF Typ. (V
R
=25 V)
10 nA Max. (V
R
=28 V)
(V
R
=1 V, f=470 MHz)
Structure
Silicon epitaxial planar type diode
Absolute Maximum Ratings
(Ta=25 °C)
•
Reverse voltage
V
R
30
V
•
Maximum reverse voltage V
RM
•
Operating temperature
•
Storage temperature
Topr
35
V
(R
L
≥10
kΩ)
–20 to +75
°C
°C
M-235
•
Small serial resistance 1.1
Ω
Typ.
Tstg –65 to +150
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Serial resistance
Capacitance deviation in a
matching group
Symbol
I
R
C
2
C
25
C
2
/C
25
rs
∆C
Conditions
V
R
=28 V
V
R
=2 V, f=1 MHz
V
R
=25 V, f=1 MHz
V
R
=1 V, f=470 MHz
V
R
=2 to 25 V, f=1 MHz
Min.
3.31
0.61
5.0
Typ.
Max.
10
4.55
0.77
1.8
5.0
(Ta=25 °C)
Unit
nA
pF
pF
Ω
%
0.70
5.7
1.1
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E91539A82-TE
