2C4261
| Model | 2C4261 |
| Description | Chip Type 2C4261 Geometry 0014 Polarity PNP |
| PDF file | Total 1 pages (File size: 32K) |
| Chip Manufacturer | SEMICOA |
Data Sheet No. 2C4261
Chip Type 2C4261
Geometry 0014
Polarity PNP
Generic Packaged Parts:
2N4260, 2N4261
Chip type
2C4261
by Semicoa Semi-
conductors provides performance
similar to these devices.
Part Numbers:
Product Summary:
APPLICATIONS:
Designed for low voltage, low gain RF
amplifier applications.
Features:
Special Characteristics
2N4261UB, 2N4260, 2N4260UB,
SD4261, SD4261F, SQ4261, SQ4261F
ft = 1.8 GHz (typ) at 10 mA/10V
Mechanical Specifications
Metallization
Bonding Pad Size
Die Thickness
Chip Area
Top Surface
Top
Backside
Emitter
Base
Al - 12 kÅ min.
Au - 6.5 kÅ nom.
2.1 mils x 2.1 mils
2.1 mils x 2.1 mils
8 mils nominal
16 mils x 16 mils
Silox Passivated
Electrical Characteristics
T
A
= 25
o
C
Parameter
BV
CEO
BV
CBO
BV
EBO
Test conditions
I
C
= 10.0 mA, I
B
= 0
I
C
= 10 µA, I
E
= 0
I
E
= 10 µA, I
C
= 0
Min
15
15
4.5
Max
---
---
---
Unit
V dc
V dc
V dc
h
FE
I
C
= 10 mA dc, V
CE
= 1.0 V dc
30
150
---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 µs, duty cycle less than 2%.
