2N917
| Model | 2N917 |
| Description | NPN SILICON PLANAR TRANSISTOR |
| PDF file | Total 4 pages (File size: 136K) |
| Chip Manufacturer | CDIL |
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N917
TO-72
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Power Dissipation @ TA=25ºC
Derate Above 25ºC
Power Dissipation @ T
C
=25ºC
Derate Above 25ºC
Operating & Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
VALUE
30
15
3
50
200
1.14
300
1.71
-65 to +200
UNIT
V
V
V
mA
mW
mW/ºC
mW
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=3mA, I
B
=0
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
CBO
V
EBO
I
CBO
h
FE
V
BE(sat)
I
C
=1µA, I
E
=0
I
E
=10µA, I
C
=0
V
CB
=15V, I
E
=0
VCB=15V, IE=0, TA=150ºC
I
C
=3mA, V
CE
=1V
I
C
=10mA, I
B
=1mA
MIN
15
30
3.0
-
-
20
-
-
TYP
-
-
-
-
-
-
-
MAX
-
-
-
1.0
1.0
200
0.4
1.0
UNIT
V
V
V
nA
µA
V
V
V
CE(sat)
I
C
=10mA, I
B
=1mA
Continental Device India Limited
Data Sheet
Page 1 of 4
