2SA1020
| Model | 2SA1020 |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| PDF file | Total 4 pages (File size: 173K) |
| Chip Manufacturer | UTC-IC |
UTC 2SA1020
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and
power switching applications.
1
FEATURES
*Low collector saturation voltage:
VCE(sat)=-0.5V(max.) (IC=-1A)
*High speed switching time: tstg=1.0µs(Typ.)
*Complement to UTC 2SC2655
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
SYMBOL
VALUE
-50
-50
-5
-2
0.5
1
150
-55 ~ +150
UNIT
V
V
V
A
W
W
°C
°C
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
V
EBO
Collector Current
Ic
Collector Power Dissipation
P
C
Collector Power Dissipation
P
C
*
Junction Temperature
T
j
Storage Temperature
T
STG
* : Mounted on cermic substrate( 250mm
2
×
0.8t )
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector cut-off current
Emitter cut-off current
Collector to emitter breakdown
voltage
DC Current Gain
Collector to emitter saturation
voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Turn-on time
Storage time
Fall time
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Cob
ton
tstg
tf
TEST CONDITIONS
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
Ic=-10mA, I
B
=0
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-1.5A
Ic=-1A, I
B
=-0.05A
Ic=-1A, I
B
=-0.05A
V
CE
=-2V, Ic=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
MIN
TYP
MAX
-1.0
-1.0
UNIT
µA
µA
V
-50
70
40
240
-0.5
-1.2
100
40
0.1
1.0
0.1
V
V
MHz
pF
µs
µs
µs
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-021,A
