2SA1037R
| Model | 2SA1037R |
| Description | Transistor |
| PDF file | Total 2 pages (File size: 2M) |
| Chip Manufacturer | JIANGSU |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1037
TRANSISTOR (PNP)
SOT-23
3
FEATURES
∙
Excellent h
FE
linearity.
∙
Complments the 2SC2412
1
1. BASE
2. EMITTER
3. COLLECTOR
2
MARKING : FQ, FR, FS
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-60
-50
-6
150
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
=-50μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-50μA,I
C
=0
V
CB
=-60V,I
E
=0
V
EB
=-6V,I
C
=0
V
CE
=-6V,I
C
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-12V,I
C
=-2mA,f=30MHz
V
CB
=-12V,I
E
=0,f=1MHz
140
4.0
5.0
120
Min
-60
-50
-6
-0.1
-0.1
560
-0.5
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Q
120 - 270
R
180 - 390
S
270 - 560
A,May,2011
