2SC3690M
| Model | 2SC3690M |
| Description | Transistor |
| PDF file | Total 2 pages (File size: 237K) |
| Chip Manufacturer | ISC |
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3690
DESCRIPTION
·Low
Collector Saturation Voltage
: V
CE(sat)
= 0.5V(Max)@ I
C
= 3A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 60V (Min)
·High
Switching Speed
APPLICATIONS
·Designed
for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
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i
em
cs
.is
w
w
VALUE
UNIT
100
V
60
V
7
V
3
A
6
A
1.5
A
15
W
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
2
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
