2SC5344O(SOT-23)
| Model | 2SC5344O(SOT-23) |
| Description | Transistor |
| PDF file | Total 1 pages (File size: 443K) |
| Chip Manufacturer | JIANGSU |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC5344
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
FEATURES
Audio power amplifier application
High h
FE
: h
FE
=100~320
Complementary to 2SA1981
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
= 0.1mA, I
B
=0
I
C
= 10mA, I
B
=0
I
E
= 0.01mA, I
C
=0
V
CB
=35V , I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=1V, I
C
= 100mA
I
C
= 500mA, I
B
=50mA
V
CE
=5V, I
C
=10mA
V
CB
=10V,I
E
= 0,f=1MHz
120
13
100
Min
35
30
5
0.1
0.1
320
0.5
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF
Rank
Range
Marking
h
FE(1)
O
100-200
FAO
Y
160-320
FAY
A,May,2011
