2SC5635
| Model | 2SC5635 |
| Description | FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| PDF file | Total 4 pages (File size: 96K) |
| Chip Manufacturer | ISAHAYA |
〈SMALL-SIGNAL TRANSISTOR〉
2SC5635
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
Mitsubishi 2SC5635 is a super mini package resin sealed
silicon NPN epitaxial transistor.It is designed for high
frequency application.
OUTLINE DRAWING
Unit:mm
2.1
0.425
1.25
0.425
FEATURE
・High gain bandwidth product.
fT=8.0GHz
・High gain,low noise.
・Can operate at low voltage.
・Super mini package for easy mounting.
1
2
3
APPLICATION
For TV tuners,high frequency amplifier,celluar phone
system.
TERMINAL CONNECTOR
: BASE
: EMITTER
JEITA:SC-70
: COLLECTOR
1
2
3
MAXIMUM RATINGS (Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
15
6
1.5
50
125
+125
-55~+125
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
I
I
CBO
EBO
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
Test conditions
Min
Limits
Typ
Max
Unit
1.0
1.0
μA
μA
GHz
pF
dB
dB
V
CB
=10V, I
E
=0mA
V
EB
=1V, I
C
=0mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
E
=10mA
V
CB
=5V, I
E
=0mA, f =1MHz
V
CE
=5V, I
C
=10mA, f =1GHz
V
CE
=5V, I
C
=5mA, f =1GHz
50
5.0
9.0
8.0
1.0
12.0
1.4
h
FE
f
T
C
ob
�½�S
21
�½�
2
NF
250
