2SC5816S
| Model | 2SC5816S |
| Description | Transistor |
| PDF file | Total 3 pages (File size: 135K) |
| Chip Manufacturer | ISAHAYA |
〈Transistor〉
2SC5814，2SC5815，2SC5816，2SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
DESCRIPTION
2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package
silicon NPN epitaxial type transistor. It is designed for low frequency
voltage amplify application.
0.95
0.5
OUTLINE DRAWING
2SC5814
2.5
1.5
0.5
0.425
Unit：�½��½�
2SC5815
2.1
1.25
0.425
0.4
0.65
2.9
1.90
2.0
1.3
①
②
③
①
②
③
FEATURE
● Facilitates miniaturization and high-density mounting
0.16
0.15
0.8
0.7
0.95
● Excellent linearity of DC forward current gain
●Low collecter to emitter saturation voltage
V
CE(sat)
=0.3V max (@I
C
=30mA,I
B
=1.5mA)
1.1
0�½�0.1
0.9
0.65
APPLICATION
For hybrid IC , small type machine low frequency voltage amplify
application
JEITA：SC-59
JEDEC：similar to TO-236
Electrode connections
①：base
②：emitter
③：collecter
2SC5816
0.4
1.6
0.8
0.4
0.3
JEITA：SC-70
JEDEC：－
Electrode connections
①：base
②：emitter
③：collecter
2SC5817
1.2
0.8
0.5
0�½�0.1
1.6
1.0
0.4
①
②
③
1.2
0.8
0.5
①
②
③
MARKING
0.7
0.55
0.1
0.45
0.4
JEITA：－
JEDEC：－
0�½�0.1
Ｅ Ｒ
TYPE NAME
�½�
ＦＥ
ITEM
JEITA：－
JEDEC：－
Electrode connections
①：base
②：emitter
③：collecter
Electrode connections
①：base
②：emitter
③：collecter
MAXIMUM RATINGS (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
RATINGS
2SC5814
2SC5815
60
6
60
125
150
＋125
-55�½�＋125
125
100
2SC5816
2SC5817
UNIT
V
V
V
mA
mW
℃
℃
P
C
T
j
T
stg
ISAHAYA ELECTRONICS CORPORATION
0.1
0.25
0.3
