2SC5938
| Model | 2SC5938 |
| Description | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| PDF file | Total 4 pages (File size: 89K) |
| Chip Manufacturer | ISAHAYA |
〈
SMALL-SIGNAL TRANSISTOR〉
2SC5938
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
DESCRIPTION
ISAHAYA 2SC5938 is a super mini package resin sealed
silicon NPN epitaxial transistor for muting and switching.
application
Unit: : mm
2.5
0.5
1.5
0.5
1
FEATURE
・
High Emitter to Base voltage
・
High Reverse hFE
・
Low ON RESISTANCE. R
ON
=1Ω
・
Small packege for mounting
VEBO=50V
2
3
APPLICATION
For muting, switching application
TERMINAL CONNECTOR
1
2
MAXIMUM RATINGS (Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
3
: BASE
: EMITTER
: COLLECTOR
EIJA:SC-59
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
50
12
50
200
150
+125
-55 ∼ +125
Unit
V
V
V
mA
mW
℃
℃
TYPE NAME
hFE ITEM
MARKING
5
A
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
I
I
CBO
EBO
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Test conditions
Min
Limits
Typ
Max
Unit
0.1
0.1
μA
μA
mV
MHz
pF
A
B
350 to 1200
5B
V
CB
=50V, I
E
=0mA
V
EB
=50V, I
C
=0mA
V
CE
=2V, I
C
=4mA
h
FE
V
CE(sat)
f
T
C
ob
200
30
30
5.0
Item
h
FE
Marking
1200
I
C
=30mA, I
B
=3mA
V
CE
=6V, I
C
=4mA
V
CB
=10V, I
E
=0mA, f=1MHz
200 to 700
5A
