2SD1815Q(TO-252-2L)
| Model | 2SD1815Q(TO-252-2L) |
| Description | Transistor |
| PDF file | Total 2 pages (File size: 1M) |
| Chip Manufacturer | JIANGSU |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
2SD1815
TO-251
TO-252-2L
TRANSISTOR (NPN)
FEATURES
Low collector-to-emitter saturation voltage
Excllent linearity of h
FE
High f
T
Fast switching time
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise note)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
120
100
6
3
1
150
-55 to +150
Units
V
V
V
A
W
℃
℃
1. BASE
1
2. COLLECTOR
3. EMITTER
2
3
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base
-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
CLASSIFICATION OF
Rank
Range
h
FE(1)
Q
70-140
R
100-200
S
140-280
T
200-400
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
S
t
f
V
CC
=50V,I
C
=1.5A, I
B1
=-I
B2
=-0.15A
Test
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=100V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=2A
I
C
=1.5A, I
B
=150mA
I
C
=1.5A, I
B
=150mA
V
CE
=10V, I
C
=500mA
V
CB
=10V, I
E
=0, f=1MHz
180
25
100
900
50
70
40
0.4
1.2
V
V
MHz
pF
nS
nS
nS
conditions
Min
120
100
6
1
1
400
Typ
Max
Unit
V
V
V
μA
μA
A,Feb,2011
