2SD2253
| Model | 2SD2253 |
| Description | SILICON NPN TRIPLE DIFFUSED POWER |
| PDF file | Total 1 pages (File size: 102K) |
| Chip Manufacturer | WINGS |
2SD2253
Silicon NPN Triple Diffused Power Transistor
GENERAL DESCRIPTION
HORIZONAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION DISPLAY, COLOR TV
High Speed Switching Applications
QUICK REFERENCE DATA
SYMBOL
TO-3PM
CONDITIONS
TYP
V
CB0
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-Base voltage
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
-
T
mb
25
I
C
= 5.0A; I
B
= 1.0A
I
F
= 6.0A
I
Csat
= 6.0A; f = 16KHz
-
-
-
-
-
-
1.6
0.3
MAX
1700
600
6
12
50
5
2.0
0.7
UNIT
V
V
A
A
W
V
V
s
LIMITING VALUES
SYMBOL
V
CB0
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-Base voltage
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
Tmb 25
MIN
-
-
-
-
-
-
-
-55
-
MAX
1700
600
6
12
3
50
150
150
UNIT
V
V
A
A
A
A
W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CE0
PARAMETER
Collector cut-off current
CONDITIONS
VCB =170 0V;
IE=0
x
TYP
-
MAX
1.0
UNIT
mA
V
CEsat
V
BEsat
h
FE
V
F
f
T
t
t
f
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency
I
C
= 5.0A; I
B
= 1.0A
I
C
= 5.0A; I
B
= 1.0A
I
C
= 1A; V
CE
= 5V
I
F
= 6.0A
I
C
= 0.1A; V
CE
= 10V
-
-
8
1.6
1
5
1.2
28
2.0
-
V
V
V
MHz
Turn-off storage time Turn-off fall time
I
C
=6A,I
B(end)
=1.5A,
0.3
0.7
s
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: ws@wingshing.com
