3DD13005N96A
| Model | 3DD13005N96A |
| Description | Transistor |
| PDF file | Total 1 pages (File size: 269K) |
| Chip Manufacturer | JIANGSU |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13005N96
TRANSISTOR (NPN)
FEATURES
Power switching applications
Good high temperature
Low saturation voltage
High speed switching
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
11
4
1.5
150
-55~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time
Transition frequency
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
Test conditions
I
C
= 1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=700V,I
E
=0
V
CE
=400V,I
B
=0
V
EB
=7V,I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=2A
I
C
=1A,I
B
=0.2A
I
C
=4A,I
B
=1A
I
C
=2A,I
B
=0.5A
I
C
=250mA (UI9600)
V
CE
=10V, I
C
=0.5A,f=1MHz
2.5
5
10
5
8
40
0.3
0.8
1.6
5
V
V
V
μs
MHz
Min
700
400
11
100
100
100
40
Typ
Max
Unit
V
V
V
μA
μA
μA
t
S
f
T
CLASSIFICATION OF h
FE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF
t
S
Rank
Range
A
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
C1
4-4.5 (μs )
C2
4.5-5 (μs )
A,Jun,2011
