3N165-TO-99-6L-ROHS
| Model | 3N165-TO-99-6L-ROHS |
| Description | Transistor, |
| PDF file | Total 2 pages (File size: 293K) |
| Chip Manufacturer | LINER |
LS/3N165, LS/3N166
MONOLITHIC DUAL P-CHANNEL
ENHANCEMENT MODE
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
(T
A
=25°C unless otherwise noted)
Drain-Source or Drain-Gate Voltage
(NOTE 2)
3N165
3N166
Gate-Gate Voltage
Drain Current
(NOTE 2)
Storage Temperature
Operating Temperature
Lead Temperature (Soldering, 10 sec.)
Power Dissipation (One Side)
Total Derating above 25ºC
40 V
30 V
±80 V
50 mA
-55ºC to +150ºC
-55ºC to +150ºC
+300ºC
300 mW
4.2 mW/ºC
SOIC
TOP VIEW
TO-99
TOP VIEW
LS3N165, LS3N166
3N165, 3N166
MOSFET
ELECTRICAL CHARACTERISTICS (T
A
=25°C and V
BS
=0 unless otherwise noted)
3N165 &
3N166
SYMBOL
I
GSSR
I
GSSF
I
DSS
I
SDS
I
D(on)
V
GS(th)
V
GS(th)
r
DS(on)
g
fs
g
os
C
lss
C
rss
C
oss
R
E
(Y
ls
)
CHARACTERISTIC
Gate Reverse Leakage Current
Gate Forward Leakage Current
Drain to Source Leakage Current
Source to Drain Leakage Current
On Drain Current
Gate Source Threshold Voltage
Gate Source Threshold Voltage
Drain Source ON Resistance
Forward Transconductance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Common Source Forward
Transconductance
MIN
--
--
--
--
--
-5
-2
-2
--
1500
--
--
--
--
1200
LS3N165 &
LS3N166
CONDITIONS
V
GS
=40V
V
GS
=-40V
pA
T
A
=+125ºC
V
DS
=-20 V, V
GS
=V
BS
=0V
V
SD
=-20 V, V
GD
=V
DB
=0V
mA
V
V
ohms
µS
µS
pF
µS
V
DS
=-15V
(NOTE 3)
V
DS
=-15V
(NOTE 3)
V
DS
=-15V
V
DS
=-15V
V
DS
=V
GS
V
GS
=-20V
V
DS
=-15V
V
GS
=-10 V
I
D
=-10µA
I
D
=-10µA
I
D
=-100µA
I
D
=-10mA
V
SB
=0V
I
D
=-10mA
V
SB
=0V
I
D
=-10mA
V
SB
=0V
f=100MHz
f=1MHz
V
SB
=0V
V
SB
=0V
V
SB
=0V
V
SB
=0V
f=1kHz
MAX MIN MAX UNITS
10
-10
-25
-200
-400
-30
-5
-5
300
300
3.0
0.7
3.0
--
--
-5
-2
-2
--
--
--
--
--
--
--
--
100
-100
--
-200
-400
-30
-5
-5
300
300
3.0
1.0
3.0
3000 1500 3000
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201138 06/26/2013 Rev#A6 ECN# 3N165 3N166
