3N170-1
| Model | 3N170-1 |
| Description | N-CHANNEL MOSFET ENHANCEMENT MODE |
| PDF file | Total 2 pages (File size: 200K) |
| Chip Manufacturer | LINEAR |
3N170 3N171
Linear Integrated Systems
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
Drain to Source
Maximum Voltages
Drain to Gate
Drain to Source
Gate to Source
±35V
25V
±35V
30mA
* Body tied to Case.
300mW
-65 to +150 °C
-55 to +135 °C
r
ds(on)
≤
200Ω
t
d(on)
≤
3.0ns
N-CHANNEL MOSFET
ENHANCEMENT MODE
TO-72
BOTTOM VIEW
G
2
3
D
S
1
4
C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
BV
DSS
V
DS(on)
V
GS(th)
I
GSS
I
DSS
I
D(on)
g
fs
r
ds(on)
C
rss
C
iss
C
db
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
Gate to Source
Threshold Voltage
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
10
1000
200
1.3
5.0
5.0
pF
3N170
3N171
1.0
1.5
MIN
25
2.0
2.0
2.0
10
10
pA
nA
mA
µS
Ω
V
TYP
MAX UNITS
CONDITIONS
I
D
= 10µA, V
GS
= 0V
I
D
= 10mA, V
GS
= 10V
V
DS
= 10V, I
D
= 10µA
V
GS
= -35V, V
DS
= 0V
V
DS
= 10V, V
GS
= 0V
V
GS
= 10V, V
DS
= 10V
V
DS
= 10V, I
D
= 2.0mA,
f
= 1.0kHz
V
GS
= 10V, I
D
= 0A,
f
= 1.0kHz
V
DS
= 0V, V
GS
= 0V,
f
= 1.0MHz
V
DS
= 10V, V
GS
= 0V,
f
= 1.0MHz
V
DB
= 10V,
f
= 1.0MHz
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
