3N191
| Model | 3N191 |
| Description | Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
| PDF file | Total 2 pages (File size: 32K) |
| Chip Manufacturer | CALOGIC |
Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N190 / 3N191
FEATURES
CORPORATION
•
Very High Input Impedance
•
High Gate Breakdown 3N190-3N191
•
Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 1)
3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Transient Gate-Source Voltage (Note 1 and 2) . . . . . . .
±125V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±80V
Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TO-99
C
2506
D2
S2
G2
D1
S1
G1
ORDERING INFORMATION
Part
Package
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
3N190-91 Hermetic TO-99
X3N190-91 Sorted Chips in Carriers
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
I
GSSR
I
GSSF
BV
DSS
BV
SDS
V
GS(th)
V
GS
I
DSS
I
SDS
r
DS(on)
I
D(on)
PARAMETER
Gate Reverse Current
Gate Forward Current
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Threshold Voltage
Gate Source Voltage
Zero Gate Voltage Drain Current
Source Drain Current
Drain-Source on Resistance
On Drain Current
-5.0
-40
-40
-2.0
-2.0
-3.0
-5.0
-5.0
-6.5
-200
-400
300
-30.0
ohms
mA
V
3N190/91
MIN
MAX
10
-10
-25
I
D
= -10µA
I
S
= -10µA, V
BD
= 0
V
DS
= -15V, I
D
= -10µA
V
DS
= V
GS
, I
D
= -10µA
V
DS
= -15V, I
D
= -500µA
V
DS
= -15V
V
SD
= -15V, V
DB
= 0
V
DS
= -20V, I
D
= -100µA
V
DS
= -15V, V
GS
= -10V
pA
V
GS
= 40V
V
GS
= -40V
T
A
= +125
o
C
UNITS
TEST CONDITIONS
