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Home > Data Sheet > 4N35-SMT&R
4N35-SMT&R

4N35-SMT&R

Model 4N35-SMT&R
Description Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6
PDF file Total 3 pages (File size: 73K)
Chip Manufacturer ISOCOM
4N35X, 4N36X, 4N37X,
4N35, 4N36, 4N37,
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
UL recognised, File No. E91231
Package System " GG "
'X' SPECIFICATION APPROVALS
VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
2.54
7.0
6.0
1.2
7.62
6.62
Dimensions in mm
1
2
3
6
5
4
7.62
4.0
3.0
0.5
13°
Max
0.26
DESCRIPTION
The 4N35, 4N36, 4N37 series of optically
coupled isolators consist of infrared light
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio (100% min.)
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
DC motor controllers
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
3.0
0.5
3.35
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
30V
70V
6V
50mA
160mW
60mA
6V
105mW
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25
17/7/08
DB90046
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