A28F010
| Model | A28F010 |
| Description | 1024K (128K x 8) CMOS FLASH MEMORY |
| PDF file | Total 23 pages (File size: 302K) |
| Chip Manufacturer | INTEL |
A28F010
1024K (128K x 8) CMOS FLASH MEMORY
(Automotive)
Y
Automotive Temperature Range
b
40 C to
a
125 C
Flash Memory Electrical Chip-Erase
1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10
ms
Typical Byte-Program
2 Second Chip-Program
1 000 Erase Program Cycles Minimum
over Automotive Temperature Range
12 0V
g
5% V
PP
High-Performance Read
120 ns Maximum Access Time
CMOS Low Power Consumption
30 mA Maximum Active Current
300
mA
Maximum Standby Current
Y
Y
Integrated Program Erase Stop Timer
Command Register Architecture for
Microprocessor Microcontroller
Compatible Write Interface
Noise Immunity Features
g
10% V
CC
Tolerance
Maximum Latch-Up Immunity
through EPI Processing
ETOX
TM
III Flash Nonvolatile Memory
Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
JEDEC-Standard Pinouts
32-Pin Plastic DIP
32-Lead PLCC
(See Packaging Spec Order
231369)
Y
Y
Y
Y
Y
Y
Y
Y
Y
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write
random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket on-
board during subassembly test in-system during final test and in-system after-sale The 28F010 increases
memory flexibility while contributing to time- and cost-savings
The 28F010 is a 1024-kilobit nonvolatile memory organized as 131 072 bytes of 8 bits Intel’s 28F010 is
offered in 32-pin Plastic DIP or 32-lead PLCC packages Pin assignments conform to JEDEC standards
Extended erase and program cycling capability is designed into Intel’s ETOX
TM
III (EPROM Tunnel Oxide)
process technology Advanced oxide processing an optimized tunneling structure and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs With the 12 0V V
PP
supply the
28F010 performs a minimum of 1 000 erase and program cycles well within the time limits of the Quick-Pulse
Programming and Quick-Erase algorithms
Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds low
power consumption and immunity to noise Its 120 nanosecond access time provides no-WAIT-state perform-
ance for a wide range of microprocessors and microcontrollers Maximum standby current of 300
mA
trans-
lates into power savings when the device is deselected Finally the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins from
b
1V to V
CC
a
1V
With Intel’s ETOX III process base the 28F010 leverages years of EPROM experience to yield the highest
levels of quality reliability and cost-effectiveness
In order to meet the rigorous environmental requirements of automotive applications Intel offers the 28F010 in
extended automotive temperature range Read and write characteristics are guaranteed over the range of
b
40 C to
a
125 C ambient
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT
INTEL CORPORATION 1995
November 1995
Order Number 290266-004
