A2W06G
| Model | A2W06G |
| Description | AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS |
| PDF file | Total 2 pages (File size: 22K) |
| Chip Manufacturer | EIC |
A2W005G - A2W10G
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
*
*
*
*
*
*
*
Glass passivated chip
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
AVALANCHE GLASS PASSIVATED
BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
AC
+
0.034 (0.86)
0.028 (0.71)
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100
µA
Maximum Avalanche Breakdown Voltage at 100
µA
Maximum Average Forward Current
0.375" (9.5 mm) lead length
Tc = 50°C
SYMBOL
V
RRM
V
RMS
V
DC
V
BO(min.)
V
BO(max.)
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
A2W
005G
50
35
50
100
550
A2W
01G
100
70
100
150
600
A2W
02G
200
140
200
250
700
A2W
04G
400
280
400
450
900
2.0
50
10
1.0
A2W
06G
600
420
600
700
1150
A2W
08G
800
560
800
900
1350
A2W
10G
1000
700
1000
1100
1550
UNIT
Volts
Volts
Volts
Volts
Volts
Amps.
Amps.
A
2
S
Volts
µA
mA
pf
°C/W
°C
°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at I
F
= 1.0 Amp.
Maximum DC Reverse Current
Ta = 25
°C
at Rated DC Blocking Voltage
Ta = 100
°C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
10
1.0
24
36
- 50 to + 150
- 50 to + 150
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
UPDATE : APRIL 23,1998
