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B10S

B10S

Model B10S
Description MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes)
PDF file Total 2 pages (File size: 111K)
Chip Manufacturer PANJIT
DATA SHEET
B1S~B10S
MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
VOLTAGE - 100 to 1000 Volts
FEATURES
• Plastic material used carries Underwriters
• Laboratory recognition 94V-O
• Low leakage
.0310 (0.8)
.0191 (0.5)
CURRENT - 0.5 Amperes
Unit: inch ( mm )
MDI
.275 (7) MAX
.165 (4.2)
.150 (3.8)
.106 (2.7)
.193 (4.9)
.177 (4.5)
.090 (2.3)
.106 (2.7)
.090 (2.3)
• Surge overload rating-- 30 amperes peak
• Ideal for printed circuit board
• Exceeds environmental standards of MIL-S-19500
MECHANICAL DATA
Case: Reliable low cost construction utilizing molded plastic technique results in
inexpensive product
Terminals: Lead solderable per MIL-STD-202, Method 208.
Polarity: Polarity symbols molded or marking on body.
Mounting Position: Any.
Weight: 0.008 ounce, 0.22 gram.
.067 (1.7)
.014 (0.35)
.006 (0.15)
.051 (1.3)
.035 (0.9)
.057 (1.3)
C .02(5)
.008 (.20)
.043 (1.1)
.027 (0.7)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
B1S
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward on glass-epoxy P.C.B (Note 1)
Current T
A
=30°C
on aluminum substrate (Note 3)
B2S
B4S
B6S
B8S
B10S
UNIT
V
V
V
A
100
70
100
200
140
200
400
280
400
600
420
600
0.5
0.8
30.0
5.0
1.00
5.0
25.0
85.0
800
560
800
1000
700
1000
Peak Forward Surge Current, 8.3ms singlehalf sine-wave
superimposed on rated load
I
2
t Rating for fusing ( t < 8.35 ms)
Maximum Forward Voltage Drop per Bridge Element at 0.5A
Maximum Reverse Current at Rated T
J
= 25°C
DC Blocking Voltage per element T
J
=125°C
Typical Junction capacitance per leg (Note 1) CJ
Typical Thermal resistance per leg (Note 2) RθJA
Typical Thermal resistance per leg (Note 2) RθJA
Operating Temperature Range T
J
Storage Temperature Range T
A
NOTES:
A
A
2
t
V
µA
mA
pF
°C/W
°C
°C
-55 to 150
-55 to 150
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.05 X 0.05"(13 x 13mm) copper pads.
3. On alum: substrate P.C.B with an rea of 0.8 x 0.8 x 0.25” ( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm ) solder pad.
PAGE . 1
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