B1366
| Model | B1366 |
| Description | LOW FREQUENCY POWER AMPLIFIER |
| PDF file | Total 4 pages (File size: 53K) |
| Chip Manufacturer | FAIRCHILD |
KSB1366
KSB1366
LOW FREQUENCY POWER AMPLIFIER
• Complement to KSD2012
1
TO-220F
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
- 60
- 60
-7
-3
- 0.5
2
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= - 50mA, I
B
= 0
V
CB
= - 60V, I
E
= 0
V
EB
= - 7V, I
C
= 0
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
I
C
= - 2A, I
B
= - 0.2A
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 0.5A
100
20
- 0.5
- 0.7
9
Min.
- 60
Typ.
Max.
- 100
- 100
320
-1
-1
V
V
MHz
Units
V
µA
µA
h
FE
Classification
Classification
h
FE1
Y
100 ~ 200
G
150 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
