B160B
| Model | B160B |
| Description | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| PDF file | Total 3 pages (File size: 59K) |
| Chip Manufacturer | DIODES |
I
F
, INSTANTANEOUS FWD CURRENT (A)
10
T
A
= +125
°
C
I
O,
AVERAGE RECTIFIED CURRENT (A)
1.0
T
A
= +75
°
C
1.0
T
A
= +25
°
C
T
A
= -25
°
C
0.5
0
25
50
75
100
125
150
T
T
, TERMINAL TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
0.1
I
F
Pulse Width = 300
m
s
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics - B120/B thru B140/B
40
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
Single Half Sine-Wave
(JEDEC Method)
30
1.0
T
A
= +125ºC
T
A
= +25ºC
20
0.1
10
T
j
= 150ºC
0.01
0
0.2
0.4
I
F
Pulse Width = 300 ms
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current
100
0.6
0.8
1.0
V
F
, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 3 Typ. Forward Characteristics - B150/B thru B160/B
T
j
= 25°C
f = 1 MHz
I
R
, INSTANTANEOUS REVERSE CURRENT (
m
A)
1000
10,000
1000
100
C
j
, JUNCTION CAPACITANCE (pF)
T
A
= +125
°
C
T
A
= +75
°
C
100
10
1
0.1
T
A
= +25
°
C
T
A
= -25
°
C
10
0.1
1
10
100
0.01
0
10
20
30
40
50
60
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 6 Typical Reverse Characteristics, B120/B thru B140/B
V
R
, REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
DS13002 Rev. H-2
2 of 3
B120/B-B160/B
