BA01207
| Model | BA01207 |
| Description | GaAs HBT HYBRID IC |
| PDF file | Total 1 pages (File size: 31K) |
| Chip Manufacturer | MITSUBISHI |
MITSUBISHI SEMICONDUCTOR <GaAs HBT>
BA01207
Specifications are subject to change without notice.
GaAs HBT HYBRID IC
DESCRIPTION
The BA01207 GaAs RF amplifier designed for J-cdmaOne
hand-held phone.
Outline Drawing
unit : milimeter
1
8
7
6
4
4.5
5
1.5max.
1:Pin
2:Vc1
3:Vc2
4:GND
5:Pout
6:Vcb
7:Vref
8:GND
FEATURES
Low voltage
Vc =3.5V
High power
Po=27.5dBm
High gain
Gp=27.5dB@Po=27.5dBm
2stage amplifier
Internal input* and output matching
*Use DC block for input port
2
3
1.45
APPLICATION
N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is
OQPSK) hand set.
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
Symbol
Vcc
Pin
Tc(op)
Tstg
Parameter
Supply voltage of HPA
Input power
Operating case temp.
Storage temp.
Condition
ZG=ZL=50Ω
Ratings*
6
7
-20
∼
+85
-30
∼
+125
Unit
V
dBm
°C
°C
*Note : Each maximum rating is guaranteed independently .
ELECTRICAL CHARACTERISTICS(Ta=25°C
, ZG=ZL=50Ω)
Limits
Symbol
f
Iq
Ict
*1
4.5
Parameter
Frequency
Quiescent current
Total current
Total current
Power added efficiency
Power Gain
Adjacent channel power at 900KHz
Adjacent channel power at 1.98MHz
2nd harmonics
3rd harmonics
Noise in RX band
Total current
Total current
Power Gain
Adjacent channel power at 900KHz
Test conditions
Unit
MAX
925
70
420
10
-
-
-47
-57
-27
-30
-135
122
5.5
-
-47
-58
MHz
mA
mA
mA
%
dB
dBc
dBc
dBc
dBc
dBm/Hz
mA
mA
dB
dBc
dBc
MIN
887
TYP
-
55
395
5.3
40
27.5
-50
-60
-30
-45
-138
107
2.5
24
-55
-66
Vc=3.5V,Vcb=Vref=2.8V
No Signal
Po=27.5dBm (IS-95B)
Vc1=Vc2=3.5V
Vcb=Vref=2.8V
-
-
-
-
25
-
-
-
-
-
Icb+Iref
hadd
Gain
ACP
*2
2sp
3sp
Rxnoise
Ict
*1
Icb+Iref
Gain
ACP
*2
Po=15dBm (IS-95B)
Vc1=Vc2=1.2V
Vcb=Vref=2.8V
-
-
21.5
-
-
Adjacent channel power at 1.98MHz
*1: Ict=Ic1+Ic2, *2:ACP=ACP (30KHz band at 900/1980KHz)-Po(1.23MHz band)
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as
(i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
Created Date: Apr.2004
