BA159DG
| Model | BA159DG |
| Description | FAST GPP DIODES |
| PDF file | Total 2 pages (File size: 53K) |
| Chip Manufacturer | LRC |
LESHAN RADIO COMPANY, LTD.
BA157G – BA159G
FAST GPP DIODES
Maximum Average
TYPE
Maximum
Peak Reverse
Voltage
PRV
V
PK
Rectified Current
@ Half-Wave
Maximum
Forward Peak
Surge Current @
Maximum
Reverse
Current @ PRV
@ T
A
=25ºC
I
R
Maximum
Forward
Voltage
@ T
A
=25ºC
I
FM
A
PK
V
FM
V
PK
Maximum
Reverse
Recovery Time
Trr
ns
Package
Dimensions
Resistive Load 60Hz 8.3ms Superimposed
I
O
@ T
L
A
AV
ºC
I
FM
(Surge)
A
PK
µAdc
BA157G
BA158G
BA159DG
BA159G
400
600
800
1000
1.0
55
20
5.0
1.0
1.3
150
250
500
500
DO – 41
Trr
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
Trr Test Conditions: I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
.107(2.7) DIA
.080(2.0)
DO – 41
35A–1/2
