BA1A4Z
| Model | BA1A4Z |
| Description | on-chip resistor PNP silicon epitaxial transistor |
| PDF file | Total 4 pages (File size: 77K) |
| Chip Manufacturer | NEC |
DATA SHEET
COMPOUND TRANSISTOR
BA1A4Z
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• On-chip bias resistor
(R
1
= 10 kΩ)
• Complementary transistor with BA1A4Z
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
60
50
5
100
200
250
150
−55
to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrode Connection
1. Emitte
2. Collector
3. Base
* PW
≤
10 ms, duty cycle
≤
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
High level input voltage
Low level input voltage
Input resistance
Turn-on time
Storage time
Turn-off time
Symbol
I
CBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
IL
**
V
IH
**
R
1
t
on
t
stg
t
off
V
CC
= 5.0 V, R
L
= 1.0 kΩ
V
I
= 5.0 V, PW = 2.0
µ
s
duty cycle≤2 %
Conditions
V
CB
= 50 V, I
E
= 0
V
CE
= 5.0 V, I
C
= 5.0 mA
V
CE
= 5.0 V, I
C
= 50 mA
I
C
= 5.0 mA, I
B
= 0.25 mA
V
CE
= 0.2 V, I
C
= 5.0 mA
V
CE
= 5.0 V, I
C
= 100
µ
A
0.7
2.0
135
100
340
300
0.04
0.8
0.55
10
0.5
13.0
0.2
5.0
6.0
0.2
MIN.
TYP.
MAX.
100
600
Unit
nA
−
−
V
V
V
kΩ
µ
s
µ
s
µ
s
** Pulse test PW
≤
350
µ
s, duty cycle
≤
2 %
h
FE
CLASSIFICATION
Marking
h
FE1
Q
135 to 270
P
200 to 400
K
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10841EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
