BA979S
| Model | BA979S |
| Description | Silicon PIN Diodes |
| PDF file | Total 4 pages (File size: 55K) |
| Chip Manufacturer | VISHAY |
BA979.BA979S
Vishay Telefunken
Silicon PIN Diodes
Features
D
Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
96 12009
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
R
I
F
T
j
T
stg
Value
30
50
125
–55...+125
Unit
V
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Diode capacitance
Differential forward re-
sistance
Reverse impedance
Minority carrier lifetime
Test Conditions
I
F
=20mA
V
R
=30 V
f=100MHz, V
R
=0
f=100MHz, I
F
=1.5mA
f=100MHz, V
R
=0
I
F
=10mA, I
R
=10mA
Type
Symbol
V
F
I
R
C
D
r
f
z
r
z
r
Min
Typ
Max
1
50
0.5
50
Unit
V
nA
pF
W
BA979
BA979S
t
5
9
4
k
W
k
W
m
s
Document Number 85533
Rev. 2, 01-Apr-99
www.vishay.de
•
FaxBack +1-408-970-5600
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