BAL99LT1G
| Model | BAL99LT1G |
| Description | Switching Diode |
| PDF file | Total 4 pages (File size: 46K) |
| Chip Manufacturer | ONSEMI |
BAL99LT1
Switching Diode
Features
•
Pb−Free Package is Available
http://onsemi.com
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Symbol
V
R
I
F
Value
70
100
Unit
Vdc
mAdc
ANODE
3
CATHODE
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
1
2
SOT−23
CASE 318
STYLE 18
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
JF
M
Specific Device Code
= Date Code
JF M
MARKING DIAGRAM
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
ORDERING INFORMATION
Device
BAL99LT1
BAL99LT1G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2004
1
July, 2004 − Rev. 3
Publication Order Number:
BAL99LT1/D
