BAM80
| Model | BAM80 |
| Description | NPN SILICON RF POWER TRANSISTOR |
| PDF file | Total 1 pages (File size: 17K) |
| Chip Manufacturer | ASI |
BAM80
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BAM80
is Designed for VHF
AM power amplifier Applications in the
range of 100 to 150 MHz.
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
•
Common Emitter
•
P
G
= 6.0 dB at 20 W/150 MHz
•
Omnigold™
Metalization System
B
C
E
ØC
E
B
D
H
I
J
MAXIMUM RATINGS
I
C
V
CES
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
8.5 A
60 V
35 V
4.0 V
85 W
-65 °C to +200 °C
-65 °C to +200 °C
2.0 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
#8-32 UNC-2A
F
E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
I
CES
h
FE
C
cb
P
G
η
C
VSWR
I
C
= 50 mA
I
C
= 20 mA
I
E
= 5.0 mA
V
CB
= 30 V
V
CE
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
60
4.0
2.0
UNITS
V
V
V
mA
mA
---
pF
dB
%
---
T
C
= 125 C
I
C
= 500 mA
f = 1.0 MHz
P
OUT
=20 W
f = 150 MHz
6.0
65
30:1
5.0
O
10
---
75
V
CE
= 13.5 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
