BAQ333
| Model | BAQ333 |
| Description | Silicon Planar Diodes |
| PDF file | Total 4 pages (File size: 57K) |
| Chip Manufacturer | VISHAY |
BAQ333...BAQ335
Vishay Telefunken
Silicon Planar Diodes
Features
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BAQ33...BAQ35 / BAQ133...BAQ135
96 12315
D
Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
Test Conditions
Type
BAQ333
BAQ334
BAQ335
Symbol
V
R
V
R
V
R
I
FSM
I
F
T
j
T
stg
Value
30
60
125
2
200
200
–65...+200
Unit
V
V
V
A
mA
°
C
°
C
Peak forward surge current
Forward current
Junction temperature
Storage temperature range
t
p
=1
m
s
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1
35
m
m copper clad, 0.9 mm
2
copper area per
electrode
Symbol
R
thJA
Value
500
Unit
K/W
Document Number 85538
Rev. 2, 01-April-99
www.vishay.de
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