BAS125-05W
| Model | BAS125-05W |
| Description | Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
| PDF file | Total 5 pages (File size: 110K) |
| Chip Manufacturer | INFINEON |
BAS 125W
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge
sensitive device, observe handling precautions!
Marking Ordering Code Pin Configuration
Type
BAS 125-04W
BAS 125-05W
BAS 125-06W
BAS 125W
Parameter
Diode reverse voltage
Forward current
Surge forward current (t
≤ 10ms)
Total Power dissipation
14s
15s
16s
13s
Q62702-
Q62702-
Q62702-
Q62702-
1 = A1
1 = A1
1 = C1
1=A
Symbol
2 = C2
2 = A2
2 = C2
Package
3=C1/A2 SOT-323
3=C1/C2 SOT-323
3=A1/A2 SOT-323
3=C
Values
25
100
500
mW
250
150
- 55 ... + 150
≤
310
≤
425
≤
230
≤
265
°C
SOT-323
Unit
V
mA
Maximum Ratings
V
R
I
F
I
FSM
P
tot
T
j
T
stg
1)
1)
T
S
≤
25 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient, BAS125W
R
thJA
R
thJA
R
thJS
R
thJS
K/W
Junction ambient, BAS 125-04W...06W
Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Dec-20-1996
