BAS16LT3G
| Model | BAS16LT3G |
| Description | Switching Diode |
| PDF file | Total 4 pages (File size: 49K) |
| Chip Manufacturer | ONSEMI |
BAS16LT1
Preferred Device
Switching Diode
Features
•
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
3
CATHODE
1
ANODE
http://onsemi.com
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
1
2
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
A6
D
= Specific Device Code
= Date Code
Max
Unit
A6 D
SOT−23
CASE 318
STYLE 8
ORDERING INFORMATION
Device
BAS16LT1
BAS16LT3G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 3
Publication Order Number:
BAS16LT1/D
