BAS16WS-T1
| Model | BAS16WS-T1 |
| Description | SURFACE MOUNT FAST SWITCHING DIODE |
| PDF file | Total 3 pages (File size: 43K) |
| Chip Manufacturer | WTE |
WTE
POWER SEMICONDUCTORS
BAS16WS
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
High Conductance
A
SOD-323
Dim
Min
2.30
1.75
1.15
0.25
0.05
0.70
0.30
Max
2.70
1.95
1.35
0.35
0.15
0.95
—
A
B
C
D
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose Switching Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O
E
D
B
G
Mechanical Data
!
!
!
!
!
Case: SOD-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.004 grams (approx.)
Marking: A6
@T
A
=25°C unless otherwise specified
E
G
H
All Dimensions in mm
H
Maximum Ratings
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0µs
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
Value
100
75
53
300
150
2.0
1.0
200
625
-65 to +150
Unit
V
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
Forward Voltage Drop
Peak Reverse Leakage Current
@T
A
=25°C unless otherwise specified
Symbol
@ I
F
= 10mA
@ V
R
= 75V
V
FM
I
RM
C
j
t
rr
Value
0.855
1.0
2.0
6.0
Unit
V
µA
pF
nS
Junction Capacitance (V
R
= 0V DC, f = 1.0MHz)
Reverse Recovery Time (Note 2)
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured with I
F
= I
R
= 10mA, I
RR
= 0.1 x I
R
, R
L
= 100.
BAS16WS
1 of 3
© 2002 Won-Top Electronics
