BAS19W-T1
| Model | BAS19W-T1 |
| Description | SURFACE MOUNT FAST SWITCHING DIODE |
| PDF file | Total 3 pages (File size: 48K) |
| Chip Manufacturer | WTE |
WTE
POWER SEMICONDUCTORS
BAS19W – BAS21W
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
High Conductance
A
L
Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose and Switching
B
!
Plastic Material – UL Recognition Flammability
Classification 94V-O
TOP VIEW
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-323
Min
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
—
0.10
0.90
1.10
0.25
—
0.05
0.15
Mechanical Data
!
!
!
!
!
!
Case: SOT-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.006 grams (approx.)
Mounting Position: Any
Marking: BAS19W
A8
BAS20W
A80
BAS21W
A82
K
J
G
TOP VIEW
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
I
F
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
BAS19W
120
100
BAS20W
200
150
400
200
2.5
200
625
-65 to +150
BAS21W
250
200
Unit
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
V
F
I
R
C
j
t
rr
Min
—
—
—
—
—
Max
1.0
1.25
100
5.0
50
Unit
V
nA
pF
nS
Test Condition
@ I
F
= 100mA
@ I
F
= 200mA
@ Rated DC Blocking Voltage
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 30mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
BAS19W – BAS21W
1 of 3
© 2002 Won-Top Electronics
