BAS20WS-T3
| Model | BAS20WS-T3 |
| Description | SURFACE MOUNT FAST SWITCHING DIODE |
| PDF file | Total 3 pages (File size: 45K) |
| Chip Manufacturer | WTE |
WTE
POWER SEMICONDUCTORS
BAS19WS – BAS21WS
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
High Conductance
A
SOD-323
Dim
Min
2.30
1.75
1.15
0.25
0.05
0.70
0.30
Max
2.70
1.95
1.35
0.35
0.15
0.95
—
A
B
C
D
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose Switching Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O
E
D
B
G
Mechanical Data
!
!
!
!
!
Case: SOD-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.004 grams (approx.)
Marking: BAS19WS A8
BAS20WS A80
BAS21WS A82
@T
A
=25°C unless otherwise specified
E
G
H
All Dimensions in mm
H
Maximum Ratings
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0µs
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
BAS19WS
120
100
70
BAS20WS
200
150
105
400
200
2.5
0.5
200
625
-65 to +150
BAS21WS
250
200
140
Unit
V
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
Forward Voltage Drop
@T
A
=25°C unless otherwise specified
Symbol
@ I
F
= 100mA
V
FM
I
RM
C
j
t
rr
BAS19WS
BAS20WS
1.0
100
5.0
50
BAS21WS
Unit
V
nA
pF
nS
Peak Reverse Leakage Current @ Rated DC Blocking Voltage
Typical Junction Capacitance (V
R
= 0V DC, f = 1.0MHz)
Reverse Recovery Time (Note 2)
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured with I
F
= I
R
= 30mA, I
RR
= 0.1 x I
R
, R
L
= 100.
BAS19WS – BAS21WS
1 of 3
© 2002 Won-Top Electronics
