BAS4004LT1
| Model | BAS4004LT1 |
| Description | CASE 318 08, STYLE 12 SOT 23 (TO 236AB) |
| PDF file | Total 4 pages (File size: 79K) |
| Chip Manufacturer | MOTOROLA |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS40–04LT1/D
Common Anode
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
•
Extremely Fast Switching Speed
•
Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc
CATHODE
1
2
CATHODE
BAS40-04LT1
Motorola Preferred Device
40 VOLTS
SCHOTTKY BARRIER DIODES
ANODE
3
3
1
2
CASE 318 – 08, STYLE 12
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
(TJ = 150°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage Temperature Range
Symbol
VR
PF
225
1.8
TJ, Tstg
– 55 to +150
mW
mW/°C
°C
Value
40
Unit
Volts
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10
µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Symbol
V(BR)R
CT
IR
VF
VF
VF
Min
40
—
—
—
—
—
Max
—
5.0
1.0
380
500
1.0
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
