BAS70H-04
| Model | BAS70H-04 |
| Description | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| PDF file | Total 1 pages (File size: 64K) |
| Chip Manufacturer | DIODES |
BAS70H/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
·
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
A
SOT-23
Dim
A
B
C
D
E
G
H
J
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
Mechanical Data
·
·
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams
Approx. Weight: 0.008 grams
E
TOP VIEW
B
C
D
G
H
K
J
L
M
K
L
M
All Dimensions in mm
BAS70H Marking: K73
BAS70H-04 Marking: K74
BAS70H-05 Marking: K75
BAS70H-06 Marking: K76
Maximum Ratings and Electrical Characteristics, Single Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t
p
<
1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
P
d
R
qJA
T
j
T
STG
BAS70
70
49
200
600
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
K/W
°C
°C
Electrical Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
RM
C
j
t
rr
Min
70
—
¾
¾
—
Max
—
410
1000
100
2.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
I
R
= 10mA
t
p
<300µs, I
F
= 1.0mA
t
p
<300µs, I
F
= 15mA
t
p
< 300µs, V
R
= 50V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
=100W
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Notes:
1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
DS30190 Rev. 4 - 4
1 of 1
BAS70H/-04/-05/-06
