BAT42WS-T3
| Model | BAT42WS-T3 |
| Description | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| PDF file | Total 2 pages (File size: 33K) |
| Chip Manufacturer | WTE |
WTE
POWER SEMICONDUCTORS
BAT42WS / BAT43WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
!
!
!
Low Turn-on Voltage
A
SOD-323
Dim
Min
2.30
1.75
1.15
0.25
0.05
0.70
0.30
Max
2.70
1.95
1.35
0.35
0.15
0.95
—
A
B
C
D
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
!
Designed for Surface Mount Application
C
!
Plastic Material – UL Recognition Flammability
Classification 94V-O
E
D
B
G
Mechanical Data
!
!
!
!
!
Case: SOD-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.004 grams (approx.)
Marking: BAT42WS L2
BAT43WS L3
@T
A
=25°C unless otherwise specified
E
G
H
All Dimensions in mm
H
Maximum Ratings
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0s
@ t < 10ms
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
P
d
R
JA
T
j
, T
STG
BAT42WS / BAT43WS
Unit
30
200
500
4.0
200
625
-55 to +125
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
@T
A
=25°C unless otherwise specified
Symbol
V
(BR)R
BAT42WS
Min
30
Typ
—
Max
—
0.4
Unit
V
Test Condition
@ I
RS
= 100µA
@ I
F
= 1.0mA
Forward Voltage
BAT42WS
BAT43WS
BAT43WS
V
F
—
—
1.0
0.33
1.0
V
@ I
F
= 200mA
@ I
F
= 2.0mA
@ I
F
= 200mA
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
C
j
t
rr
—
—
—
—
—
—
0.5
10
5.0
µA
pF
nS
@ V
R
= 25V
V
R
= 1.0V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Valid provided that terminals are kept at ambient temperature.
BAT42WS / BAT43WS
1 of 2
© 2002 Won-Top Electronics
