C30737P-230
| Model | C30737P-230 |
| Description | Epitaxial Silicon Avalanche Photodiode |
| PDF file | Total 5 pages (File size: 99K) |
| Chip Manufacturer | PERKINELMER |
Optoelectronics
D A T A S H E E T
PRELIMINARY DATA SHEET
C30737
Epitaxial Silicon Avalanche Photodiode
Description
The C30737 type avalanche photodiode provides high
responsivity between 500 nm and 1000 nm, as well as
extremely fast rise times at all wavelengths with a
frequency response up to 1.0 GHz. The active area
diameters of the photosensitive surface are 0.23 mm
and 0.5mm. Other photosensitive diameters are also
available on a custom basis.
The detector chip is hermetically sealed behind a flat
glass window mounted in a TO-18 package. TO-18
plastic sealed packages and plastic surface mount
packages are additional options.
PerkinElmer Optoelectronics is committed to supplying
the highest quality products to our customers. Certified
to meet ISO 9001, the Epitaxial series is designed to
satisfy MIL-STD-883 and/or MIL-STD-750.
Applications
•
Range Finding
•
Optical communication systems
Features
•
Low cost
•
0.23 mm and 0.5mm active
diameter
•
High gain at low bias voltage
•
Low breakdown voltage
•
Fast response
•
Low noise
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