CHA2066RBF/24
| Model | CHA2066RBF/24 |
| Description | 10-16GHz Self biased Low Noise Amplifier |
| PDF file | Total 8 pages (File size: 185K) |
| Chip Manufacturer | UMS |
CHA2066RBF
10-16GHz Self biased Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a two-stage self biased wide
band monolithic low noise amplifier.
The MMIC is manufactured with a standard
PM-HEMT process: 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
Main Features
■
Broad band performance: 10-16GHz
■
Gain = 15dB (typical)
■
Noise Figure 2.0dB (typical)
■
Output power (P
-1dB
) 13dBm (typical)
■
Return loss < -6dB
■
SMD leadless package
■
Dimensions: 5.08 x 5.08 x 0.97 mm
3
SMD Package Dimensions
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated
by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the
package
(i.e.
side
with
metallic
pads)
is
just
for
fabrication
purposes
and
does
NOT
indicate
the
location
of
PIN
1."
Ref. : DSCHA2066RBF2317 -13-Nov.-02
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
